An investigation of the diffusion and electromigration limited growth mechanism of InP

In an electroepitaxial system, growth is carried out and sustained by passing electric current through substrate-solution interface in an isothermal condition. In the present study, investigations have been carried out to understand the growth mechanism of InP using a computer simulation technique. Profiles of P in an In-rich melt have been simulated under various conditions. Growth/dissolution rates and thicknesses of the epilayers have been calculated, and the results are discussed in detail.