• Title of article

    Temperature dependence of luminescence in ZnSe

  • Author/Authors

    Yoshino، نويسنده , , Kenji and Matsushima، نويسنده , , Yasushi and Tiong-Palisoc، نويسنده , , Shirley and Ohmori، نويسنده , , Kenzo and Hiramatsu، نويسنده , , Makoto، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    4
  • From page
    68
  • To page
    71
  • Abstract
    As-grown ZnSe and RbCl- and CsCl-doped ZnSe single crystals are grown by a sublimination method. The temperature dependence of the photoluminescence (PL) spectra in the blue emission region is measured from 4.2 K to 300 K. The emission band is observed in RbCl- and CsCl-doped ZnSe from 4.2 K to 300 K. In as-grown and Zn-annealed ZnSe, the emission band undergoes considerable attenuation at 100 K. However, the emission band is clearly observed in Se-annealed ZnSe up to near room temperature. These results prove that the disappearance of Se vacancies enhances room temperature PL.
  • Keywords
    Semiconductors , Sublimation method , Vacancy , Optical properties , Photoluminescence , ZnSe
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1995
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2131256