Title of article
Temperature dependence of luminescence in ZnSe
Author/Authors
Yoshino، نويسنده , , Kenji and Matsushima، نويسنده , , Yasushi and Tiong-Palisoc، نويسنده , , Shirley and Ohmori، نويسنده , , Kenzo and Hiramatsu، نويسنده , , Makoto، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
4
From page
68
To page
71
Abstract
As-grown ZnSe and RbCl- and CsCl-doped ZnSe single crystals are grown by a sublimination method. The temperature dependence of the photoluminescence (PL) spectra in the blue emission region is measured from 4.2 K to 300 K. The emission band is observed in RbCl- and CsCl-doped ZnSe from 4.2 K to 300 K. In as-grown and Zn-annealed ZnSe, the emission band undergoes considerable attenuation at 100 K. However, the emission band is clearly observed in Se-annealed ZnSe up to near room temperature. These results prove that the disappearance of Se vacancies enhances room temperature PL.
Keywords
Semiconductors , Sublimation method , Vacancy , Optical properties , Photoluminescence , ZnSe
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1995
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131256
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