Title of article :
Atomic-scale characterization of interfaces in the GaAs/AlGaAs superlattices
Author/Authors :
Pusep، نويسنده , , Yu.A. and da Silva، نويسنده , , S.W. and Galzerani، نويسنده , , J.C. and Lubyshev، نويسنده , , D.I. and Basmaji، نويسنده , , P. and Milekhin، نويسنده , , A.G. and Preobrazhenskii، نويسنده , , V.V. and Semyagin، نويسنده , , B.R. and Marahovka، نويسنده , , I.I.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Pages :
4
From page :
180
To page :
183
Abstract :
We present a new interpretation of the Raman spectra of GaAs/AlAs ultrathin-layer superlattices based on the microscopic analysis of the optical vibrational modes. The difference between normal and inverted interfaces is responsible for the lack of the inversion symmetry of the layers with respect to the central plane, therefore confined modes can no longer be considered as even or odd ones. All the optical vibrational modes, independently of their quantum index, are now active in Raman scattering.
Keywords :
superlattices
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1995
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2131278
Link To Document :
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