• Title of article

    Charge capture in AlGaAsGaAs heterostructures with disordered antidot lattice

  • Author/Authors

    Basmaji، نويسنده , , P. and Gusev، نويسنده , , G.M. and Lubyshev، نويسنده , , D.I. and de P.A. Silva، نويسنده , , M. and Rossi، نويسنده , , J.C. and Nastaushev، نويسنده , , Yu.V. and Baklanov، نويسنده , , M.R.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    3
  • From page
    322
  • To page
    324
  • Abstract
    We have observed hot electron trapping by DX centers in a mesoscopic sample with disordered antidot lattice. Depending on the maximum applied electric field the potential barriers for trajectories along the sample will increase. The maximum total captured charge is approximately equal to 50 electron.
  • Keywords
    Heterostructures
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1995
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2131305

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2131305