Proton implantation of AlxGa1 − xAsGaAs resonant-tunnelling diode structures

It is shown that it is possible to implant protons through a double-barrier resonant-tunnelling diode structure without causing irreparable degradation of its I-V characteristics: both the 295 K and 77 K I-V characteristics are degraded severely by the implantation process, but annealing of the proton-implanted diode recovers its as-grown performance almost completely. The implications of this for the fabrication of three-dimensional electronic circuitry are described.