Title of article
Proton implantation of AlxGa1 − xAsGaAs resonant-tunnelling diode structures
Author/Authors
Billen، نويسنده , , K. and Kelly، نويسنده , , M.J. and Hutchinson، نويسنده , , S.V. and Henini، نويسنده , , M. and Hill، نويسنده , , G.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
6
From page
376
To page
381
Abstract
It is shown that it is possible to implant protons through a double-barrier resonant-tunnelling diode structure without causing irreparable degradation of its I-V characteristics: both the 295 K and 77 K I-V characteristics are degraded severely by the implantation process, but annealing of the proton-implanted diode recovers its as-grown performance almost completely. The implications of this for the fabrication of three-dimensional electronic circuitry are described.
Keywords
Ion implantation , tunnelling , Gallium arsenide , Semiconductor for devices
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1995
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131317
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