Title of article
Diffusion constant of ga, in and as adatoms on gaas (001) surface: molecular dynamics calculations
Author/Authors
Palma، نويسنده , , A. and Semprini، نويسنده , , E. and Talamo، نويسنده , , A. and Tomassini، نويسنده , , N.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
135
To page
138
Abstract
A valence force field to reproduce both the phonon dispersion curves of crystalline GaAs and first principle derived interaction energies of Ga, In and As adatoms on GaAs (001) surface has been optimized. Calculations of diffusion constant of Ga, In and As atoms on the GaAs surface have been performed by molecular dynamics classical trajectory simulations.
Keywords
Gallium arsenide , surface diffusion
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1996
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131429
Link To Document