Author/Authors :
Polyakov، نويسنده , , A.Y. and Chelniy، نويسنده , , A.A. and Smirnov، نويسنده , , N.B. and Govorkov، نويسنده , , A.V. and Milnes، نويسنده , , A.G. and Li، نويسنده , , Xiaolei and Aluev، نويسنده , , A.N. and Orlov، نويسنده , , P.B.، نويسنده ,
Abstract :
The presence of oxygen in phospjine during MOCVD growth of undoped layers of InGaAlP is shown to produce a high resistivity of the samples and to lead to the formation of various deep states, most notably defects with energy levels of about Ec − 0.5eV.
Keywords :
Oxygen , Electrical properties , Semiconductors , MOCVD , phosphine
