Reflow of BeF2-B2O3-GeO2-SiO2 glasses and application of their membranes to metal-oxide-silicon (MOS) capacitors

The capacitance-voltage (C-V) characteristics of metal-oxide-silicon (MOS) capacitors passivated by BeF2-B2O3-GeO2-SiO2 glasses with various water and fluoride contents were investigated. As the OH− absorption coefficient of the glass increased, adverse effects on the recovery of hysteresis loops of C-V curve shifts were observed. The water content is closely related to the fluoride content in the BeF2-B2O3-GeO2-SiO2 glass. The viscous flow point of the glass was lowered with increasing degree of ionic character obtained from Hannayʹs equation. The normal C-V curve shift was observed for the MOS capacitors passivated with the glass with 25% BeF2.