Title of article
Evaluation of quantum efficiency of porous silicon photoluminescence
Author/Authors
Skryshevsky، نويسنده , , V.A. and Laugier، نويسنده , , A. and Strikha، نويسنده , , V.I. and Vikulov، نويسنده , , V.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
54
To page
57
Abstract
The influence of photoluminescence of top porous silicon layer on deep p-n junction photocurrent is studied. The measurement of additional photocurrent caused by adsorption of porous silicon emission is shown to allow evaluation of the external quantum efficiency of photoluminescence. This can reach approximately 4% on n-Si upon illumination by the short wavelength tail of air mass (AM) 1.5 spectra.
Keywords
Porous silicon , Photoluminescence , solar cell
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1996
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131650
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