Fabrication and characterization for single crystal substrates of YBa2Cu3O7 δ and related materials

We have characterized oxide superconductor single crystal substrates for thin film processing, called ‘homoepitaxial growth’, which were fabricated from single crystals of YBa2Cu3O7 δ and 123-structure related materials such as YBa2 (Cu1 x Znx)3O7 δ and Pr1 + x Ba2 xCu3O7 δ grown by the pulling method. Those substrates have good crystallinity with a Zmin value of approximately 2%, evaluated by Rutherford backscattering spectrometry and good surface morphology with unit-cell steps observed by atomic force microscopy. Therefore, those substrates are necessary for completing fine processing, 123-structure pseudo-homoepitaxial growth, for device applications.