Title of article
BaTiO3/SrTiO3 thin films grown by an MBE method using oxygen radicals
Author/Authors
Shigetani، نويسنده , , Hisashi and Fujimoto، نويسنده , , Masayuki and Sugimura، نويسنده , , Wataru and Matsui، نويسنده , , Yoshio and Tanaka، نويسنده , , Junzo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
148
To page
151
Abstract
BaTiO3(BTO) thin films were grown by an MBE method using an oxygen radical source. BaO and TiO2 layers were alternately-deposited on a SrTiO3 (001) substrate (STO), and the structure of the thin film obtained was evaluated by X-ray diffraction, reflection high energy electron diffraction and transmission electron microscopy. The BTO thin films were epitaxially grown and oriented in the (001) direction. The lattice constants of the thin film varied with distance from the interface of BTO and STO. Near the interface, the a-value was shorter than that for bulk BTO while the c-value was longer than that for bulk BTO.
Keywords
X-ray diffraction , lattice , Thin films
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1996
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131754
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