Pt/SrBi4Ti4O15/Si-MOS system: preliminary study employing an inverted MOS configuration

Highly polarizable c-axis-oriented SrBi4Ti4O15 (SBTO) films with permittivity of 53ɛ0 were grown on (100)Pt/(100)MgO substrates by eclipse pulsed laser deposition (PLD) method. By mechanically contacting a p -Si tip onto the SBTO surface and using a Pt underlying layer as the base electrode, the inverted metal-oxide semiconductor (MOS) structures were prepared. Although the experiment is still in the preliminary stage, the field-induced carrier density at the Si surface reached as high as about 5.0 × 1012 cm 2 for 5 V applied voltage, being about 10 times higher than that of the metal/SiO2/Si MOS diode.