E-beam tomography of planar semiconductor structures

The ‘apparatus’ approach to the realization of e-beam layer-by-layer tomography in which the reconstruction of internal structure and physical properties depth distribution is achieved by means of specially designed set-up has been discussed. It is shown that the backscattering electron mode with a variation primary electron energy or using energy dispersive detection, and modulated electron beam induced current and cathodoluminescence modes can be used as the ‘apparatus’ tomography methods for nondestructive characterization of multilayer planar structures. The depth resolution of these methods achieve 10 nm.