Temperature dependent EBIC and deep level transient spectroscopy investigation of different types of misfit-dislocations at MOVPE grown GaAs/InGaAs/GaAs-single-quantum wells

Using deep level transient spectroscopy (DLTS) a trap correlated to misfit dislocations in GaAs/InGaAs/GaAs heterostructures is observed. The characteristics fit well previous findings of a dislocation correlated defect in plastically deformed GaAs. Using recently developed criteria to distinguish deep bandlike and localized states by means of DLTS this level is shown to originate from point defects at or very close to the dislocation core. The temperature dependence of electron beam induced current contrast of α- and β-misfit dislocations has also been measured on the same dislocations.