Title of article
Effects of thermal annealing on properties of p-type ZnSe grown by MOVPE
Author/Authors
Ogata، نويسنده , , Ken-ichi and Kawaguchi، نويسنده , , Daisuke and Kera، نويسنده , , Takashi and Fujita، نويسنده , , Shizuo and Fujita، نويسنده , , Shigeo، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
5
To page
8
Abstract
Effects of thermal annealing on the layer quality of p-type ZnSe:N grown by metalorganic vapor phase epitaxy (MOVPE) were investigated. Although the thermal annealing at 500 °C is a key to obtain high NA - ND, it causes degradation of the layer quality in the same time. Annealing temperatures should be carefully chosen so that activation of acceptors effectively occurs while degradation of quality can be suppressed. A slightly lower annealing temperature (~ 400–450 °C) seems to offer the possibility of solving the above contradiction.
Keywords
p-Type ZnSe , Metalorganic vapour phase epitaxy , Thermal annealing
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131972
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