Title of article
Characteristic exciton properties of ZnS and ZnSe films
Author/Authors
Manar، نويسنده , , A. and Chergui، نويسنده , , A. and Guennani، نويسنده , , D. and Ohlmann، نويسنده , , D. and Cloitre، نويسنده , , T. and Aulombard، نويسنده , , R.L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
121
To page
125
Abstract
Epitaxial layers of ZnSe and ZnS have been grown on GaAs (100) substrates by low-pressure metal-organic vapor phase epitaxy (MOVPE) and etched out from their substrates. The optical quality of the layers has been investigated at 2 K by low-intensity reflection, transmission and photoluminescence measurements.
h excitation intensities, the near-band-edge luminescence has been determined in both ZnS and ZnSe samples. Exciton and biexciton contributions have been studied.
Keywords
Epitaxial layers II–VI , Linear and nonlinear spectroscopy , Exciton-exciton collisions
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132026
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