Title of article
Electronic structure and temperature dependence of excitons in GaN
Author/Authors
Monemar، نويسنده , , B. and Buyanova، نويسنده , , I.A. and Bergman، نويسنده , , J.P. and Amano، نويسنده , , H. and Akasaki، نويسنده , , I.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
172
To page
175
Abstract
The influence of epitaxial strain and temperature on free exciton properties for GaN is discussed, in relation to optical spectra. The exciton-polariton coupling is also briefly discussed, from the temperature dependence of the LO phonon replicas.
Keywords
Bound exciton , Photoluminescence , Electronic structure
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132045
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