Title of article
Beryllium diffusion in InGaAs epitaxial layers: a point defect nonequilibrium model
Author/Authors
Marcon، نويسنده , , J. and Koumetz، نويسنده , , S. and Ketata، نويسنده , , K. and Ketata، نويسنده , , M. and Launay، نويسنده , , P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
78
To page
81
Abstract
Be diffusion during post-growth annealing has been studied in InGaAs epitaxial layers. To explain the observed concentration profiles, a point defect nonequilibrium model has been proposed. A good agreement has been obtained between experimental and calculated data. The point defect concentration in epitaxial layers during diffusion in InGaAs is also discussed.
Keywords
Beryllium , Post-growth annealing , Epitaxial layers
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132151
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