Title of article
Cathodoluminescence characterization of a compound semiconductornative dielectric interface
Author/Authors
Berchenko، نويسنده , , N.N. and Izhnin، نويسنده , , I.I. and Savchyn، نويسنده , , V.P. and Stakhira، نويسنده , , J.M. and Voitsekhovskii، نويسنده , , A.V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
139
To page
142
Abstract
The possibilities of cathodoluminescence spectroscopy are illustrated by examples of the investigation of the oxide-semiconductor structures obtained by different oxidation techniques of group II, III and IV chalcogenides. The cathodoluminescence results are used directly for the phase identification and their spatial distribution determination in the oxide layer and at the interface with the semiconductor.
Keywords
Cathodoluminescence spectroscopy , X-ray photoelectron spectroscopy , Auger electron spectroscopy , Metal oxide semiconductor
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132180
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