Author/Authors :
Molinas، نويسنده , , B. and Favaretto، نويسنده , , M. and Meregalli، نويسنده , , L. and Passaseo، نويسنده , , A. and Mirenghi، نويسنده , , L. and Rossetto، نويسنده , , G. and Natali، نويسنده , , M. and Torzo، نويسنده , , G.، نويسنده ,
Abstract :
The results of the development of two different technologies for the preparation of special surfaces for ready-to-use (‘epi-ready’) InP wafers are presented. The epi-ready state was studied by means of X-ray photoelectron spectroscopy. The quality of the substrates stored for 4–12 months was tested by growing an epilayer by metal-organic vapor phase epitaxy and by characterizing it with high-resolution X-ray diffraction and photoluminescence techniques. Evidence that one of our technologies could be adopted industrially is given.
