Assessment of compensation ratio in high-purity GaAs using photoluminescence

The compensation ratio in high-purity n-type GaAs layers grown by metal-organic vapour phase epitaxy was determined from low-temperature photoluminescence measurements using the intensity ratio of the acceptor- and donor-bound excitonic transitions. The compensation ratio decreases with increasing V-III ratio. At high V-III ratio, a total acceptor content of below 1 × 10−13 cm−3 is found.