Title of article
Characterization of molecular beam epitaxy p-CdxHg1 − xTe layers using the photoconductive effect in crossed fields
Author/Authors
Studenikin، نويسنده , , S.A. and Protasov، نويسنده , , D.Yu. and Kostyuchenko، نويسنده , , V.Ya. and Varavin، نويسنده , , V.S.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
288
To page
291
Abstract
The photoconductive effect in crossed E → ⊥ B → fields together with the conventional photo-Hall method and multicarrier analysis were used for the characterization of thin p-CdxHg1 − xTe layers grown by molecular beam epitaxy (MBE). The described techniques provided information about recombination parameters of the films: surface recombination velocities, bulk lifetime and diffusion length.
Keywords
Photoconductive effect , Recombination velocities , diffusion length
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132247
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