Rapid and high concentrated permeation of Ga into InSb

Ga permeation experiments were performed by putting an In-Ga-Sb solution into contact with InSb substrates under no crystal growth conditions. The permeation distances were 770, 1270 and 2750 μm at 380, 430 and 480 °C, respectively. They increased with increased holding temperatures. The apparent diffusion coefficient of Ga ranged from 3 × 10−7 to 5–10−6 cm2 s−1. Rapid permeation occurred when the substrate came into contact with the solution.