Title of article
Material and process related limitations of InP HEMT performance
Author/Authors
Van Hove، نويسنده , , M. and Finders، نويسنده , , A. J. J. van der Zanden، نويسنده , , K. and De Raedt، نويسنده , , W. and Van Rossum، نويسنده , , M. and Baeyens، نويسنده , , Y. and Schreurs، نويسنده , , D. and Menozzi، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
311
To page
315
Abstract
We review the status and discuss the limitations of the device and monolithic microwave integrated circuit technology for lattice-matched and pseudomorphic HEMTs grown on InP substrates. Some technological aspects will be discussed including layer growth, ohmic contact fabrication, electron-beam defined mushroom-shaped gates, uniformity of gate-recess etching, buried gate contacts and the effect of silicon nitride passivation on the device performance. Finally some device lifetime issues are discussed, including preliminary results of low-frequency dispersion measurements and a study of hot electron degradation.
Keywords
High electron mobility transistors , InP substrates , limitations
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132252
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