SOI-structures produced by the silicon direct bonding method

Complex investigations of silicon-on-insulator (SOI)-structures produced by silicon direct bonding have been carried out. The investigations have shown that the quality of the formed monolithic SOI-structures strongly depends on the regimes of the low-temperature step. The optimal kinematics of the process of silicon surfaces contact at room temperature has been determined. The measurements have shown that the surface states density at the Si-SiO2 interface and fixed charge in the oxide for the SOI-structures are concordant with those of a thermal gate oxide.