Title of article
Optical and electrical properties of 2-dimensional electron gas in GaN/AlGaN heterostructures
Author/Authors
Alause، نويسنده , , H. and Knap، نويسنده , , W. and Azema، نويسنده , , S. Contreras and Bluet، نويسنده , , J.M. and Sadowski، نويسنده , , M.L. and Huant، نويسنده , , S. and Young، نويسنده , , J. and Khan، نويسنده , , M. Asif and Chen، نويسنده , , Q. and Shur، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
79
To page
83
Abstract
Cyclotron resonance studies of two-dimensional electrons confined at the GaN/AlGaN interface are presented. The value of the 2D-electron cyclotron mass is determined and discussed in view of non-parabolicity effects. The influence of non-parabolicity is enhanced by the spatial confinement of electrons and is calculated in the triangular well approximation. After subtraction of non-parabolicity corrections, the same mass 0.226 m0 with 2% precision is obtained for 2D and bulk electrons in GaN.
Keywords
Semiconductors , Heterojunctions , Cyclotron resonance , electronic band structure
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132329
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