Comparison of the electrical and optical properties of 3C-SiC on SOI from different origin

We report on 3C-SiC laters deposited on separation by implanted oxygen (SIMOX) substrates obtained from two different origins. In both cases, using X-ray diffraction measurements, we evidenced a good relaxation of the residual strain inside the SiC layer. However, from X-ray transmission electron microscopy (XTEM) and infrared reflectivity measurements, we observed large cavities and Si islands located inside the buried oxide. Depending on the sample origin, they were in different amount. In spite of these structural defects we could evidence, from square resistance measurements, an improvement in the SiC layer insulation of approximately 100 °C when compared with SiC/Si. An upper limit of 640 K was even reached for the sample which exhibits the best silicon-on-insulator (SOI) characteristics.