Title of article
6H-3C SiC structures grown by sublimation epitaxy
Author/Authors
Lebedev، نويسنده , , Alexander A. and Savkina، نويسنده , , Natalia S. and Strelʹchuk، نويسنده , , Anatolii M. and Tregubova، نويسنده , , Alla S. and Scheglov، نويسنده , , Mikhail P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
3
From page
168
To page
170
Abstract
The objective of the present work was to prepare heterojunctions in the 3C-6H system and to investigate their characteristics. The heteroepitaxy was carried out using sublimation epitaxy (SE) in an open system. The presence of 3C-SiC in the deposited structures was confirmed by X-ray diffraction. The p-n junction parameters were investigated from current-voltage and capacitance-voltage measurements, electroluminescence spectrum and DLTS data.
Keywords
Sublimation epitaxy , 6H-3C structures , X-ray diffraction
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132350
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