SiC material for high-power applications

SiC has long been known as a suitable material for high-power applications. However, due to the poor material quality, it is not until recently that SiC has received proper attention. In order to realise high-power devices in SiC, thick epitaxial layers must be grown with a low doping concentration and, in the bipolar case, with a long carrier lifetime. In addition to these requirements it is also very important that the morphology of the grown layers is good in order to obtain a reasonable yield with comparatively large devices. In this paper we will describe one possible and promising way to produce these layers. We will also briefly mention the problems that remain to be solved and take a look into the near future in terms of epitaxial growth.