Title of article
6H-SiC P-N structures with predominate exciton electroluminescence, obtained by sublimation epitaxy
Author/Authors
Lebedev، نويسنده , , A.A. and do Carmo، نويسنده , , M.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
3
From page
275
To page
277
Abstract
6H-SiC diodes with strong exciton electroluminescence (EL) have been obtained by sublimation epitaxy. The EL band increases very quickly with increasing forward current (J) and becomes predominant in the diode radiation spectrum at high values of J and elevated temperatures. The exciton band does not change its spectral position up to uniaxial stress values of about 40 kbar.
Keywords
6H-SiC diodes , electroluminescence , Uniaxial pressure
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132372
Link To Document