6H-SiC P-N structures with predominate exciton electroluminescence, obtained by sublimation epitaxy

6H-SiC diodes with strong exciton electroluminescence (EL) have been obtained by sublimation epitaxy. The EL band increases very quickly with increasing forward current (J) and becomes predominant in the diode radiation spectrum at high values of J and elevated temperatures. The exciton band does not change its spectral position up to uniaxial stress values of about 40 kbar.