Title of article
Surface processing of silicon carbide substrates
Author/Authors
Bakin، نويسنده , , A.S. and Dorozhkin، نويسنده , , S.L and Bogachov، نويسنده , , S.V. and Kazak-Kazakevich، نويسنده , , A.Z. and Lyutetskaja، نويسنده , , I.G. and Sazanov، نويسنده , , A.P.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
370
To page
373
Abstract
Silicon carbide application as substrate material for epitaxial growth and for device fabrication strongly depends on the possibilities of surface processing. The aim of the present paper is to study the influence of the different types of surface processing and their consequence on the silicon carbide surface morphology and removal of the mechanically damaged near-surface layer.
Keywords
Surface processing , epitaxial growth , silicon carbide
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132430
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