Photoluminescence of heavily doped GaAs/AlGaAs quantum wells in high magnetic fields

We studied the photoluminescence in GaAs/AlGaAs single quantum wells at fields up to a maximum of 22 T and observed spectra due to impurities, heavy-hole excitons, and Landau levels. The wells were doped with Si at different doping levels up to 3 × 1018 cm−3 in order to examine this influence on the photoluminescence. We compare results from two well widths, 50 Å and 100 Å, over an energy range from about 1.4 to 1.7 eV. From the dependence on field of the Landau levels, a cyclotron mass ratio of 0.11 ± 0.02 was determined, which is larger than the bulk GaAs mass ratio of 0.067. The heavy-hole exciton binding energy was about 15 meV for the 100 Å well.