Title of article
Formation of compound semiconductor clusters by spontaneous alloying
Author/Authors
Yasuda، نويسنده , , H. and Mori، نويسنده , , H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
4
From page
249
To page
252
Abstract
Alloying behavior of antimony atoms into indium-cored aluminum clusters has been studied by in-situ measurements of transmission electron microscopy. When antimony is vapor-deposited onto aluminum clusters with an indium core of about 4 nm in mean diameter, antimony atoms quickly dissolve only into the shell-shaped region of aluminum to form the polycrystalline AlSb compound, and no alloying takes place in the indium core. Upon depositing antimony onto aluminum clusters with an indium core of about 1 nm in mean diameter, antimony atoms quickly dissolve into the shell-shaped region of aluminum to form an amorphous Al0.5Sb0.5 alloy.
Keywords
Aluminium , Alloying , Semiconductors
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
1996
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2132470
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