Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Thermal annealing of interface traps induced by 60Co gamma-ray irradiation has been studied for cubic silicon carbide (3C-SiC) metal-oxide-semiconductor (MOS) structures using high-frequency capacitance-voltage (C—V) method. The isochronal annealing behaviors of interface traps and trapped charges in oxides induced by irradiation are found to decrease with increasing temperature. The annealing behaviors up to 400°C are analyzed and the activation energies are determined using the isochronal annealing formula derived from the rate equation of the chemical reaction. The annealings of the interface traps and trapped charges in oxides near the 3C-SiC/SiO2 interface are discussed in terms of the activation energies obtained.