Self-consistent calculation of a delta-doped field effect transistor (δ-FET)

A self-consistent calculation for the electronic energy levels in a delta-FET is performed in the low-temperature approximation, taking into account appropriate boundary conditions for the Poisson equation. In comparison with previous calculations, the present one shows no divergencies for the upper levels in the well when the contact potential is increased, while lower values for the width of the region of depletion are obtained.