Title of article :
Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy
Author/Authors :
Liao، نويسنده , , S.M. and Wen، نويسنده , , J.H. and Chou، نويسنده , , W.C. and Lan، نويسنده , , S.M.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Pages :
6
From page :
205
To page :
210
Abstract :
Thin films of gallium nitride (GaN) were successfully prepared by our atmospheric pressure (AP) organometallic vapor phase epitaxy (OMVPE) system using GaN buffer layer over basal plane (0001) sapphire substrates. In the present study, strong band-edge photoluminescence (PL) in GaN films is observed. The variations of the growth temperature and ammonia/trimethylgallium (NH3/TMG) mass flow ratio with the full width at half maximum (FWHM) of band-edge luminescence (IBE, respectively, indicate that we could obtain ranges of the growth temperature and the NH3/TMG ratio to have high quality GaN single crystal. The band-edge to deep-level luminescence (IDL) ratio (IBE/IDL) also reveals that we could obtain optimized appropriate growth temperature and the supply of active nitrogen of excellent optical properties.
Keywords :
Organometallic vapor phase epitaxy (OMVPE) , Photoluminescence (PL) , Gallium nitride (GaN)
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1997
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2132598
Link To Document :
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