• Title of article

    Crystal growth of CdTe alloyed with Zn, Se and S

  • Author/Authors

    Chang، نويسنده , , Chung-Yi and Tseng، نويسنده , , Bae-Heng Tseng، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1997
  • Pages
    4
  • From page
    1
  • To page
    4
  • Abstract
    Single crystals of CdTe-based quaternary alloys are grown by a vertical Bridgman method. The lattice constant of the quaternary ingot is proposed to match that of Cd0.8Zn0.2Te. To compensate the Zn segregation in CdTe, a suitable amount of Se or S was added along with Zn. We found that the compensate effect was not significant, particularly for the CdZnTeS alloy. Nevertheless, an ingot with a fairly uniform lattice constant was obtained for the CdZnTeSe alloy mainly because the effective segregation coefficient of Se was close to one. A study using double crystal X-ray diffractometry indicated that the addition of Se or S to CdZnTe would degrade the crystal quality.
  • Keywords
    Crystal growth , CdTe , Quaternary alloys
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1997
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2132626