Title of article
Crystal growth of CdTe alloyed with Zn, Se and S
Author/Authors
Chang، نويسنده , , Chung-Yi and Tseng، نويسنده , , Bae-Heng Tseng، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
1
To page
4
Abstract
Single crystals of CdTe-based quaternary alloys are grown by a vertical Bridgman method. The lattice constant of the quaternary ingot is proposed to match that of Cd0.8Zn0.2Te. To compensate the Zn segregation in CdTe, a suitable amount of Se or S was added along with Zn. We found that the compensate effect was not significant, particularly for the CdZnTeS alloy. Nevertheless, an ingot with a fairly uniform lattice constant was obtained for the CdZnTeSe alloy mainly because the effective segregation coefficient of Se was close to one. A study using double crystal X-ray diffractometry indicated that the addition of Se or S to CdZnTe would degrade the crystal quality.
Keywords
Crystal growth , CdTe , Quaternary alloys
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132626
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