Title of article
Characterization of p-AglnSe2/n-Zn0.35Cd0.65S polycrystalline thin film heterojunctions
Author/Authors
Ramesh، نويسنده , , P.P. and Hussain، نويسنده , , O.Md. and Uthanna، نويسنده , , S. and Naidu، نويسنده , , B.S. and Reddy، نويسنده , , P.J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
27
To page
30
Abstract
Polycrystalline thin film p-AglnSe2/n-Zn0.35Cd0.65S heterojunctions were fabricated and the current density-voltage, capacitancevoltage and spectral response characteristics of the junctions were studied. The heterojunction was illuminated in the back-wall configuration and an open-circuit voltage of 425 mV, a short-circuit current density of 30 mA cm−2 and an electrical conversion efficiency of 7.5% have been obtained for a cell with an active area of 1 cm2 under a solar input of 100 mW cm−2.
Keywords
solar cells , Semiconductor , Electrical properties and measurements , Optical properties
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132634
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