Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

We report spectroscopic ellipsometry (SE) and low-temperature reflectance data on epitaxial GaN thin film samples covering the widest range of tensile and compressive stress (−3.8–3.5 kbar) thus far. SE allows us to assess the preparation of smooth and abrupt GaN surfaces by chemical treatments in real time, and, coupled with the reflectance data, the E dn/dE contribution to dispersion, which is important for laser action. The reflectance data explicitly show the nonlinear behavior of the B–A and C–A splittings versus the energy of the A exciton. Lineshape ambiguities that hindered previous interpretations have been resolved with reciprocal space analysis, allowing us to obtain band parameters such as ΔSO=17.0±1 meV and ΔCF=9.8±1 meV with increased confidence.