Influence of Si doping level on the Raman and IR reflectivity spectra and optical absorption spectrum of GaN

The optical absorption α(hν) and Raman and Infra Red (IR) spectra of Si doped GaN layers deposited on sapphire through buffer layers have been recorded for electron concentrations from 5×1017 to 5×1019 cm−3. The α(hν) values deduced from photothermal deflection spectroscopy (0.5–3.5 eV) and IR absorption (0.15–0.5 eV) vary between 50 and 104 cm−1 showing doping dependant free electron absorption at low energy, doping independant band gap at high energy, and slowly doping dependant defect absorption in the medium energy range. In our micro Raman geometry, maxima appear or can be deduced near the frequency expected for either the A1(LO−) or the A1(LO+) modes split from the A1(LO) mode by plasmon phonon interaction. There is a large systematic evolution in the expected way for the IR reflectivity.