III–V nitrides: wurtzite symmetry and optical absorption

We report here on the study of the theoretical optical properties of Ga based nitrides systems. The dipolar matrix elements and hole effective masses are presented as a function of the reciprocal wavevector for strained bulk GaN. We compute then the A, B and C exciton binding energies for strained GaN/Al0.2Ga0.8N quantum structures and present the calculated optical density for a 50 إ wide well.