MOVPE growth and characterization of AlxGa1-xN

AlGaN is an important material in the design of nitride devices. However, little is known concerning its growth with high Al contents. We have studied the growth of AlxGa1-xN epilayers on c-face sapphire by low pressure MOVPE (76 Torr), using triethylgallium, trimethylaluminum and ammonia as precursors. The solid versus gas phase composition relationship was determined experimentally and was fitted using a kinetic model. Then the structural properties of the layers (x=0–1) were studied, using X-ray diffraction, scanning electron microscopy and transmission electron microscopy. We demonstrate that at high Al content, the buffer layer defects are replicated into the AlGaN layer.