Title of article
Comparative study of hexagonal and cubic GaN growth by RF-MBE
Author/Authors
Feuillet، نويسنده , , G and Widmann، نويسنده , , F and Daudin، نويسنده , , B and Schuler، نويسنده , , J and Arlery، نويسنده , , M and Rouvière، نويسنده , , J.L and Pelekanos، نويسنده , , N and Briot، نويسنده , , O، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
233
To page
237
Abstract
The epitaxial growth of both cubic and hexagonal GaN epilayers is considered here with the aim of comparing their physical properties. In particular, the growth mechanisms at the first stages of growth will be dealt with together with the quality of the growth front. The optical characteristics of the epilayers will be compared by reference to the structure of the defects present within the different types of layers.
Keywords
Cubic GaN growth , RF-MBE , Hexagonal GaN growth
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132855
Link To Document