Title of article :
Gain spectra in cw InGaN/GaN MQW laser diodes
Author/Authors :
Deguchi، نويسنده , , T and Azuhata، نويسنده , , T and Sota، نويسنده , , T and Chichibu، نويسنده , , S and Nakamura، نويسنده , , S، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Abstract :
A systematic study on the optical gain of continuous wave InGaN/GaN multiple quantum well laser diode wafers has been achieved by means of the variable excitation-stripe length (VEL) method. It will be demonstrated that mechanisms producing optical gain may vary according to the degree of fluctuation of InGaN composition in the lateral plane.
Keywords :
Compositional fluctuation , laser diodes , optical gain
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
