Title of article
Tunneling spectroscopy in quasicrystals
Author/Authors
Davydov، نويسنده , , D.N. and Mayou، نويسنده , , D. and Berger، نويسنده , , C. and Gignoux، نويسنده , , C. and Jansen، نويسنده , , A.G.M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
4
From page
972
To page
975
Abstract
We present tunneling spectroscopy measurements for icosahedral i-AlPdRe, i-AlCuFe and approximant α-AlMnSi phases. We show that for both oxidized and bare surfaces the density of states (DOS) close to the Fermi level exhibits specific features for quasicrystals and approximants as compared with the crystalline non approximant ω-AlCuFe phase. The Fermi energy lies in the middle of a narrow pseudo-gap of about 50 meV width. For higher energies, the DOS varies as the square root of energy, which is attributed to electron-electron interaction. The overall DOS differs from ab initio calculations and the possible roles of electron scattering and non homogeneous electronic structure close to the surface are discussed.
Keywords
Quasicrystals , Tunneling spectroscopy , Electron-electron interaction , Electronic density of states
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: A
Record number
2132896
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