Fabrication and characterisation of p-type GaN metal-semiconductor-metal ultraviolet photoconductors grown by MBE

We have fabricated interdigital metal-semiconductor-metal ultraviolet photoconductors using p-type GaN grown by MBE. The material had a hole concentration of 1018 cm−3 and a mobility of 5 cm2 V−1 s−1. The spectral response of the detectors has been measured and it shows a peak at 364.2 nm (3.402 eV) possibly caused by excitonic effects. The transient response of the photodetector cannot be described by a single time constant. The rise and fall times of the photoresponse are different indicating that the theory usually applied to GaN photoconductors is not valid.