Blue–green microcavity light emitting diode with monolithic MgZnSSe/ZnSSe Bragg reflectors

Optical properties of the first fully monolithic molecular beam epitaxy (MBE) grown II–VI microcavity light emitting diode (MCLED) structure emitting at 502 nm are studied. A CdZnSe quantum well is placed in a ZnSSe λ-cavity between MgZnSSe/ZnSSe distributed Bragg reflectors (DBR). The 20.5 period n-type bottom and 4 period p-type top mirrors are designed to have reflectivities of ≈90 and 47%, respectively. Room temperature photoluminescence (PL) measurements for the surface emitting MCLED structure show a clear increase in emission intensity and a remarkably narrow spectral width of 5 nm at the cavity resonance. Initial electrical injection tests show a very narrow spectral width of 6 nm from a MCLED emitting at 503 nm.