Title of article
Gain characteristics of InP/InGaAs heterostructure avalanche photodiode
Author/Authors
Hyun، نويسنده , , Kyung Sook and Park، نويسنده , , Chanyong and Lee، نويسنده , , E.H، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
4
From page
106
To page
109
Abstract
The structural parameters of an avalanche photodiode, having a p-i-n structure of a multiplication region, have been analyzed by solving the electric field equations and avalanche gain factors. The multiplication layer width dependence of the breakdown voltage as well as the temperature dependent behavior of the breakdown voltage are explained consistently for devices.
Keywords
Avalanche photodiode , Avalanche gain , Multiplication layer width , Charge plate
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1998
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132967
Link To Document