GaAs/AlGaAs based electrically tunable RCE photodiode

Semiconductor layers grown epitaxially can add novel optical properties to conventional optoelectronic devices. Enclosing a photodetector into an integrated Fabry–Perot optical resonator results in increased sensitivity and wavelength selectivity. Such resonant cavity enhanced photodetectors can be incorporated into wavelength division multiplexed optical communication links. Tunability of RCE photodetectors can be achieved by replacing the detecting layer by a multiple quantum well structure. The physical principle of tuning is the quantum confined Stark effect. We report on successful growth, preparation and characterisation of electrically tunable RCE photodetector for the 850 nm wavelength range based on the GaAs/AlGaAs material system.