Title of article
Observation of a new type of giant magnetoresistance with possible sensor applications
Author/Authors
Overend، نويسنده , , N and Nogaret، نويسنده , , A and Gallagher، نويسنده , , B.L and Main، نويسنده , , P.C and Henini، نويسنده , , M and Wirtz، نويسنده , , R and Newbury، نويسنده , , R and Marrows، نويسنده , , C and Howson، نويسنده , , M.A and Beaumont، نويسنده , , S.P، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1998
Pages
3
From page
216
To page
218
Abstract
We demonstrate the existence of a new type of giant magnetoresistance (GMR) in hybrid semiconductor/ferromagnetic devices. We observe up to a ∼1000% increase in resistance for applied fields of only ∼100 mT at a temperature of 4 K and ∼1% at 300 K. The GMR has a strong angular dependence and it can also be strongly hysteretic. Optimisation of device parameters is expected to increase considerably the magnitude of GMR. Such devices may have applications as magnetic sensors and memories.
Keywords
Semiconductors , Magnetoresistance-giant , Devices , Heterostructures
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1998
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2133037
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